是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.4 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 15 A |
集电极-发射极最大电压: | 180 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | PNP |
功耗环境最大值: | 150 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1429R | TOSHIBA |
获取价格 |
TRANSISTOR 15 A, 180 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Pow | |
2SB1430 | NEC |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER | |
2SB1430 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1430 | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor | |
2SB1430K | NEC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220VAR | |
2SB1430-K | RENESAS |
获取价格 |
5A, 100V, PNP, Si, POWER TRANSISTOR | |
2SB1430-K-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1430-K-AZ | RENESAS |
获取价格 |
5A, 100V, PNP, Si, POWER TRANSISTOR | |
2SB1430L | NEC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220VAR | |
2SB1430-L | RENESAS |
获取价格 |
5A, 100V, PNP, Si, POWER TRANSISTOR |