2SB1430

更新时间： 2024-11-08 06:17:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	227K
描述
isc Silicon PNP Darlington Power Transistor

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2SB1430 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1430

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -100V(Min)

·High DC Current Gain-

: h_FE= 2000(Min)@ (V_CE= -2V, I_C= -2A)

·Low Collector Saturation Voltage-

: V_CE(sat)= -1.5V(Max)@ (I_C= -2A, I_B= -2mA)

APPLICATIONS

·Designed for low-frequency power amplifiers and low-

speed switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-100

-7

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

-5

I_CM

-10

I_B

-0.5

Collector Power Dissipation

@T_a=25℃

P_C

Collector Power Dissipation

@T_C=25℃

Junction Temperature

Storage Temperature

150

-55~150

℃

T_J

T_stg

isc Website：www.iscsemi.cn

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与2SB1430相关器件

型号	品牌	获取价格	描述	数据表
2SB1430K	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SB1430-K	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-K-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1430-K-AZ	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430L	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SB1430-L	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-L-AZ	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430M	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SB1430-M	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-M-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,