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2SB1430L PDF预览

2SB1430L

更新时间: 2024-11-25 23:20:07
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
6页 117K
描述
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220VAR

2SB1430L 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SB1430  
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SB1430 is a Darlington power transistor that can directly  
drive from the IC output. This transistor is ideal for motor drivers  
and solenoid drivers in such as OA and FA equipment.  
In addition, this transistor features  
a small resin-molded  
insulation type package, thus contributing to high-density mounting  
and mounting cost reduction.  
FEATURES  
• High hFE due to Darlington connection:  
hFE 2,000 (VCE = 2 V, IC = 2 A)  
• Mold package that does not require an insulating board or  
insulation bushing  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Electrode Connection  
1. Base  
Parameter  
Symbol  
VCBO  
Ratings  
100  
100  
7.0  
Unit  
V
2. Collector  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
3. Emitter  
VCEO  
V
EQUIVALENT CIRCUIT  
VEBO  
V
5.0  
IC(DC)  
A
10  
IC(pulse)*  
IB(DC)  
A
0.5  
A
PT (TC = 25°C)  
PT (TA = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
20  
W
W
°C  
°C  
2.0  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D13660EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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