2SB1430L

更新时间： 2024-11-09 23:20:07

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	117K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR

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中文翻译

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数据手册

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2SB1430L 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SB1430

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SB1430 is a Darlington power transistor that can directly

drive from the IC output. This transistor is ideal for motor drivers

and solenoid drivers in such as OA and FA equipment.

In addition, this transistor features

a small resin-molded

insulation type package, thus contributing to high-density mounting

and mounting cost reduction.

FEATURES

• High h^FEdue to Darlington connection:

h^FE≥ 2,000 (V^CE= 2 V, I^C= 2 A)

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Electrode Connection

1. Base

Parameter

Symbol

V^CBO

Ratings

−100

−7.0

Unit

2. Collector

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

3. Emitter

V^CEO

EQUIVALENT CIRCUIT

V^EBO

−5.0

I^C(DC)

−10

I^C(pulse)*

I^B(DC)

−0.5

P^T(T^C= 25°C)

P^T(T^A= 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D13660EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SB1430L相关器件

型号	品牌	获取价格	描述	数据表
2SB1430-L	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-L-AZ	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430M	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SB1430-M	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-M-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1430-M-AZ	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1431	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER
2SB1431	RENESAS	获取价格	SILICON POWER TRANSISTOR
2SB1431	NJSEMI	获取价格	Trans Darlington PNP 100V 8A Automotive 3-Pin(3+Tab) TO-220F
2SB1431-AZ	NEC	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,