2SB1430L

更新时间： 2024-01-07 18:24:17

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	117K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR

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技术参数
数据手册

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2SB1430L 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.21
外壳连接：	ISOLATED	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	100 V	配置：	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：	2000	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	80 MHz	Base Number Matches：	1

2SB1430L 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SB1430

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SB1430 is a Darlington power transistor that can directly

drive from the IC output. This transistor is ideal for motor drivers

and solenoid drivers in such as OA and FA equipment.

In addition, this transistor features

a small resin-molded

insulation type package, thus contributing to high-density mounting

and mounting cost reduction.

FEATURES

• High h^FEdue to Darlington connection:

h^FE≥ 2,000 (V^CE= 2 V, I^C= 2 A)

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Electrode Connection

1. Base

Parameter

Symbol

V^CBO

Ratings

−100

−7.0

Unit

2. Collector

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

3. Emitter

V^CEO

EQUIVALENT CIRCUIT

V^EBO

−5.0

I^C(DC)

−10

I^C(pulse)*

I^B(DC)

−0.5

P^T(T^C= 25°C)

P^T(T^A= 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D13660EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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