Datasheet > 2SB1430

2SB1430

更新时间： 2024-09-19 07:30:07

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	218K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB1430 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1430

DESCRIPTION

·With TO-220F package

·High DC current gain.

·Low collector saturation voltage.

·DARLINGTON

APPLICATIONS

·Ideal for motor drivers and solenoid drivers

In such as OA and FA equipment

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-100

-7

UNIT

Open base

Open collector

-5

I_CM

Collector current-peak

Base current

-10

I_B

-0.5

T_C=25ꢀ

T_a=25ꢀ

P_T

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

ꢀ

T_stg

12 3

中文翻译

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与2SB1430相关器件

型号	品牌	获取价格	描述	数据表
2SB1430K	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SB1430-K	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-K-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1430-K-AZ	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430L	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SB1430-L	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-L-AZ	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430M	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SB1430-M	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-M-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,