是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 15 A | 集电极-发射极最大电压: | 180 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 150 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
VCEsat-Max: | 3 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SA1302-O | TOSHIBA |
功能相似 |
TRANSISTOR 15 A, 200 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
NTE2329 | NTE |
功能相似 |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1429_15 | JMNIC |
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Silicon PNP Power Transistors | |
2SB1429_2014 | JMNIC |
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Silicon PNP Power Transistors | |
2SB1429O | ETC |
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TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 15A I(C) | TO-247VAR | |
2SB1429-O | TOSHIBA |
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TRANSISTOR 15 A, 180 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SB1429R | TOSHIBA |
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TRANSISTOR 15 A, 180 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Pow | |
2SB1430 | NEC |
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PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER | |
2SB1430 | SAVANTIC |
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Silicon PNP Power Transistors | |
2SB1430 | ISC |
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isc Silicon PNP Darlington Power Transistor | |
2SB1430K | NEC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220VAR | |
2SB1430-K | RENESAS |
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5A, 100V, PNP, Si, POWER TRANSISTOR |