Datasheet > 2SB1409S

2SB1409S

更新时间： 2024-09-12 05:56:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
Silicon NPN Triple Diffused Type Transistor

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中文翻译

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数据手册

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2SB1409S 数据手册

SMD Type

Transistors

Silicon NPN Triple Diffused Type Transistor

2SB1409S

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-180

-160

-5

-1.5

Collector peak current

Collector power dissipation

Junction temperature

I^C(peak)

P^C*1

T^j

-3

150

Storage temperature

Tstg

-55 to +150

*1 Value at TC = 25

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

IC = -1 mA, IE = 0

-180

-160

-5

IC = -10 mA, RBE =

IE = -1 mA, IC = 0

VCB = -160 V, IE = 0

-10

ìA

V^CE= -5 V, IC = -150 mA*

V^CE= -5 V, IC = -500 mA*

IC= -500 mA, IB = -50 mA

VCE = -5 V, IC = -150 mA

200

DC current transfer ratio

h^FE

Collector to emitter saturation voltage

Base to emitter voltage

VCE(sat)

V^BE

f^T

-1

-1.5

Gain bandwidth product

240

MHz

Collector output capacitance

C^ob

VCB = -10 A, IE = 0, f = 1 MHz

* Pulse test.

hFE Classification

TYPE

hFE

60 to 120

100 to 200

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