Datasheet > 2SB1411

2SB1411

更新时间： 2024-09-15 06:16:03

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	217K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1411 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1411

DESCRIPTION

·With TO-220F package

·DARLINGTON

·High DC current gain

·Low collector saturation voltage

APPLICATIONS

·Switching applications

·Hammer drive ,pulse motor drive applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-100

-7

UNIT

Open base

Open collector

-2

I_CM

Collector current-peak

Base current

-3

I_B

-0.5

T_C=25ꢀ

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

ꢀ

T_stg

-55~150

12 3

中文翻译

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