Datasheet > 2SB1412_09

2SB1412_09

更新时间： 2024-11-22 06:19:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	187K
描述
Low frequency transistor (−20V,−5A)

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中文翻译

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数据手册

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2SB1412_09 数据手册

Low frequency transistor (−20V,−5A)

2SB1412

zFeatures

zDimensions (Unit : mm)

1) Low V^CE(sat).

2SB1412

V^CE(sat)= −0.35V (Typ.)

(I^C/IB = −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2118.

zStructure

Epitaxial planar type

PNP silicon transistor

(1) Base

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

Denotes hFE

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

−30

−20

−6

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

−5

A(DC)

A(Pulse)

Collector current

Collector power

−10

∗

2SB1412

dissipation

W(Tc=25°C

)

Junction temperature

Storage temperature

1 Single pulse, Pw=10ms

150

°C

Tstg

−55 to 150

∗

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

Max.

−

Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−30

−20

−6

−

= −50

= −1mA

= −50

Collector-emitter breakdown voltage BVCEO

−

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

−

CBO

EBO

CE(sat)

−

−0.5

−1.0

390

−

CB= −20V

EB= −5V

Emitter cutoff current

−

Collector-emitter saturation voltage

−

0.35

−

/I = −4A/ −0.1A

∗

−

CE= −2V, I

= −0.5A

=50mA, f=100MHz

=0A, f=1MHz

DC current transfer ratio

Transition frequency

120

MHz

CE= −6V, I

Output capacitance

Cob

−

CB= −20V, I

Measured using pulse current.

∗

www.rohm.com

2009.12 - Rev.C

1/3

12 3 4

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