Datasheet > 2SB1412

2SB1412

更新时间： 2024-09-15 05:56:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
Low Frequency Transistor

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中文翻译

获取价格

数据手册

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2SB1412 数据手册

SMD Type

Transistors

Low Frequency Transistor

2SB1412

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Low VCE(sat).

PNP silicon transistor.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

Rating

Unit

-30

V^CEO

-20

V^EBO

-6

-5

A(DC)

Collector current

I^C

-10

A (Pulse)*

Collector current pulse

I^CP

P^C

-10

Collector power dissipation

(Tc=25

)

Junction temperature

Storage temperature

150

Tstg

-55 to +150

* Single pulse ,PW=10ms

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-30

-20

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BVCBO IC=-50ìA

BV^CEOIC=-1mA

BV^EBOIE=-50ìA

I^CBO

I^EBO

V^CE(sat)IC= -4A, IB= -0.1A

h^FEVCE= -2V, IC= -0.5A

f^T

VCB=-20V

-0.5

ìA

Emitter cutoff current

VEB=-5V

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

-0.35 -1.0

390

VCE= -6V, IE=50mA, f=100MHz

VCB= -20V,IE=0A,f=1MHz

120

MHz

Transition frequency

C^ob

hFE Classification

Rank

hFE

82 180

120 270

180 390

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