是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
风险等级: | 5.34 | 外壳连接: | COLLECTOR |
配置: | SINGLE | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1411 | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor | |
2SB1411 | TOSHIBA |
获取价格 |
TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) | |
2SB1411 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1411_06 | TOSHIBA |
获取价格 |
Silicon PNP Triple Diffused Type | |
2SB1412 | ROHM |
获取价格 |
Low Frequency Transistor(-20V,-5A) | |
2SB1412 | TYSEMI |
获取价格 |
Low VCE(sat). PNP silicon transistor. Collector-base voltage VCBO -30 V | |
2SB1412 | UTC |
获取价格 |
HIGH VOLTAGE SWITCHING TRANSISTOR | |
2SB1412 | KEXIN |
获取价格 |
Low Frequency Transistor | |
2SB1412 | SECOS |
获取价格 |
PNP Silicon Low Frequency Transistor | |
2SB1412 | CJ |
获取价格 |
TO-252-2L |