Datasheet > 2SB1412

2SB1412

更新时间： 2024-09-15 06:19:59

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	209K
描述
PNP Silicon Low Frequency Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1412 数据手册

2SB1412

PNP Silicon

Elektronische Bauelemente

Low Frequency Transistor

RoHS Compliant Product

Features

1)Low VCE(sat).

D-Pack

2)Excellent DC current gain characteristics

3)Complements the 2SD2118

0.2

6.6

0.1

2.3

0.2

0.1

5.3

0.1

0.5

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

−30

−20

−6

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

−5

A(DC)

Collector current

0.1

0.8

∗

−10

A(Pulse)

0.3

1.2

0.5

0.1

0.6

2SB1386

0.3

0.1

1.5Max

0.7

2.3

Collector power

dissipation

2SB1412

2SB1326

W(TC=25°C)

∗

°C

Junction temperature

150

Storage temperature

1 Single pulse, Pw=10ms

Tstg

−55~+150

∗

2 When mounted on a 40

40×

0.7 mm ceramic board.

3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm²or larger.

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−30

−20

−6

−

=−50µA

=−1mA

Collector-emitter breakdown voltage BVCEO

−

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

−

=−50µA

CB=−20V

EB=−5V

CBO

EBO

CE(sat)

−

−0.5

−1.0

390

−

µA

Emitter cutoff current

−

Collector-emitter saturation voltage

−

=−4A/−0.1A

∗

2SB1386,2SB1412

DC current

120

−

CE=−2V, I

C=−0.5A

transfer ratio

2SB1326

−

Transition frequency

120

MHz

CE=−6V, I

=50mA, f=30MHz

=0A, f=1MHz

Output capacitance

Cob

−

CB=−20V, I

∗Measured using pulse current.

!Packaging specifications and h^FE

Package

Code

Taping

T100

2500

−

TV2

Basic ordering

unit (pieces)

1000

2500

Type

2SB1386

2SB1412

2SB1326

PQR

−

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

中文翻译

下载PDF

与2SB1412相关器件

型号	品牌	获取价格	描述	数据表
2SB1412(TO-251)	BL Galaxy Electrical	获取价格	20V,5A,General Purpose PNP Bipolar Transistor
2SB1412(TO-252)	BL Galaxy Electrical	获取价格	20V,5A,General Purpose PNP Bipolar Transistor
2SB1412/P	ROHM	获取价格	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
2SB1412/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412_09	ROHM	获取价格	Low frequency transistor (−20V,−5A)
2SB1412_10	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
2SB1412_15	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
2SB1412F5	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 10A I(C) \| TO-252