是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大集电极电流 (IC): | 5 A |
配置: | Single | 最小直流电流增益 (hFE): | 160 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1.8 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 12 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1360E | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-225VAR |
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2SB1360F | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-225VAR |
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2SB1360T114 | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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2SB1360T114/DE | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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2SB1360T114/DF | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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2SB1360T114/EF | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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2SB1360T114/F | ROHM |
获取价格 |
5A, 100V, PNP, Si, POWER TRANSISTOR |
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2SB1360T114D | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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2SB1360T114F | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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2SB1361 | PANASONIC |
获取价格 |
Silicon PNP triple diffusion planar type(For high power amplification) |
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