Datasheet > 2SB1366F-Y

2SB1366F-Y

更新时间： 2024-01-27 13:17:39

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	157K
描述
PNP Silicon Power Transistors

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中文翻译

获取价格

数据手册

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2SB1366F-Y 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

2SB1366F-O

2SB1366F-Y

Micro Commercial Components

Features

•

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

PNP Silicon

Power Transistors

Low V^CE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

•

€ € Halogen free available upon request by adding suffix "-HF"

Maximum Ratings

TO-220F

•

Mounting Torgue: 5 in-lbs Maximum

Symbol

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

-60

-7.0

-3.0

Unit

V_CEO

V_CBO

V_EBO

I_C

Collector power dissipation

P_C

T =25^OC

2.0

T_J

T_STG

Junction Temperature

Storage Temperature

-55 to +150

^OC

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

-60

---

-100

Vdc

µAdc

(I =-50mAdc, I_B=0)

I_CBO

Collector-Base Cutoff Current

(V_CB=-60Vdc,I =0)

Emitter-Base Cutoff Current

(V_EB=-7.0Vdc, I =0)

I_EBO

---

ON CHARACTERISTICS

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

Forward Current Transfer ratio

---

200

---

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

(I =-0.5Adc, V_CE=-5.0Vdc)

Forward Current Transfer ratio

DIMENSIONS

(I =-3.0Adc, V_CE=-5.0Vdc)

INCHES

MIN

.392

DIM

NOTE

MAX

.408

MIN

9.96

MAX

10.36

Collector-Emitter Saturation Voltage

---

-1.0

---

Vdc

MHz

(I =-2.0Adc, I =-0.2Adc)

.138

.106

3.50

2.70

Base-Emitter Saturation Voltage

---

.583

.142

.020

.598

.158

.030

14.80

3.60

0.50

15.20

(I =-0.5Adc, V_CE=-5.0Vdc)

.520

.100

13.20

4.00

f_T

Transition Frequency

9.0

150

2.54

(V_CE=-5.0Vdc, I =-0.5Adc)

0.75

C_ob

Collector Output Capacitance

---

.043

.169

.110

.053

.185

.126

1.10

4.30

2.80

1.35

4.70

3.20

(V_CB=-10Vdc, I =0, f=1.0MHz)

t _f

Fall time

---

0.4

1.7

---

µs

.098

.020

.114

.030

2.50

0.50

2.90

0.75

Storage time

(I =-2Adc, I B1=-IB2=-0.2Adc,VCC= -30Vdc)

C=-2Adc, I B1=-IB2=-0.2Adc,VCC= -30Vdc)

t _s

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

2. h_FERange: O: 60~120, Y:100~200

www.mccsemi.com

1 of 2

Revision: A

2013/03/08

中文翻译

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与2SB1366F-Y相关器件

型号	品牌	获取价格	描述	数据表
2SB1367	ISC	获取价格	Silicon PNP Power Transistors
2SB1367	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1368	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1368	ISC	获取价格	Silicon PNP Power Transistors
2SB1368F	SWST	获取价格	功率三极管
2SB1369	ISC	获取价格	Silicon PNP Power Transistors
2SB1369	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1369	ROHM	获取价格	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1369/DF	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1369/E	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti

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