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2SB1368 PDF预览

2SB1368

更新时间: 2024-11-02 06:17:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
4页 158K
描述
Silicon PNP Power Transistors

2SB1368 数据手册

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Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1368  
DESCRIPTION  
·With TO-220F package  
·Complement to type 2SD2060  
·Low collector saturation voltage:  
V
CE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A  
·Collector power dissipation:  
PC=25W(TC=25)  
APPLICATIONS  
·With general purpose applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
2
Collector  
Base  
Fig.1 simplified outline (TO-220F) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base votage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
-80  
UNIT  
V
V
V
A
A
Open base  
-80  
Open collector  
-5  
-4  
IB  
Base current  
-0.4  
2.0  
Ta=25℃  
TC=25℃  
PC  
Collector dissipation  
W
25  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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