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2SB1369 PDF预览

2SB1369

更新时间: 2024-11-02 06:16:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 117K
描述
Silicon PNP Power Transistors

2SB1369 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

2SB1369 数据手册

 浏览型号2SB1369的Datasheet PDF文件第2页浏览型号2SB1369的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1369  
DESCRIPTION  
·With TO-220 package  
·High collector power dissipation  
·High current capability  
APPLICATIONS  
·For general purpose applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBO
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALU
-60  
UNIT  
V
V
V
A
A
Collector -emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
-60  
Open collector  
-5  
-3  
ICM  
Collector current-peak  
-6  
Ta=25  
TC=25℃  
2.0  
PC  
Collector power dissipation  
W
40  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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