Datasheet > 2SB1367

2SB1367

更新时间： 2024-11-02 06:20:27

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	240K
描述
Silicon PNP Power Transistors

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2SB1367 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1367

DESCRIPTION

·With TO-220F package

·Complement to type 2SD2059

·Low collector saturation voltage:

V_CE(sat)=-2.0V(Max) at I_C=-4A,I_B=-0.4A

·Collector power dissipation:

P_C=30W(T_C=25ꢀ)

APPLICATIONS

·With general purpose applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-100

-5

UNIT

Open base

Open collector

-5

I_B

Base current

-0.5

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

T_j

150

T_stg

-55~150

ꢀ

12 3 4

中文翻译

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