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2SB1361 PDF预览

2SB1361

更新时间: 2024-11-02 07:30:03
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 123K
描述
Silicon PNP Power Transistors

2SB1361 数据手册

 浏览型号2SB1361的Datasheet PDF文件第2页浏览型号2SB1361的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1361  
DESCRIPTION  
·With TO-3PFa package  
·Complement to type 2SD2052  
·High transition frequency  
·Wide area of safe operation  
APPLICATIONS  
·For high power amplification  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
-150  
-150  
-5  
UNIT  
Open emitter  
Open base  
V
V
V
A
A
Open collector  
-9  
ICP  
Collector current-peak  
-15  
TC=25ꢀ  
100  
3
PC  
Collector power dissipation  
W
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 9A I(C) | TO-247VAR
2SB1361Q ETC

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TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 9A I(C) | TO-247VAR
2SB1361S ETC

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TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 9A I(C) | TO-247VAR
2SB1362 ISC

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2SB1362 SAVANTIC

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2SB1362P PANASONIC

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Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1362Q PANASONIC

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Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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2SC3229
2SB1366 SAVANTIC

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