2SB1361

更新时间： 2024-01-16 12:15:41

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	227K
描述
isc Silicon PNP Power Transistor

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中文翻译

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2SB1361 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB1361

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -150V(Min)

·Wide Area of Safe Operation

·Complement to Type 2SD2052

APPLICATIONS

·Designed for high power amplifications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-150

-5

UNIT

Collector Current-Continuous

Collector Current-Pulse

-9

I_CP

-15

Collector Power Dissipation

@ T_C=25℃

100

P_C

Collector Power Dissipation

@ T_a=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SB1361相关器件

型号	品牌	获取价格	描述	数据表
2SB1361P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 9A I(C) \| TO-247VAR
2SB1361Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 9A I(C) \| TO-247VAR
2SB1361S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 9A I(C) \| TO-247VAR
2SB1362	ISC	获取价格	Silicon PNP Power Transistors
2SB1362	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1362P	PANASONIC	获取价格	Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1362Q	PANASONIC	获取价格	Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1362S	PANASONIC	获取价格	Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1366	KEC	获取价格	2SC3229
2SB1366	SAVANTIC	获取价格	Silicon PNP Power Transistors