Datasheet > 2SB1361Q

2SB1361Q

更新时间： 2024-11-01 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	53K
描述
TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 9A I(C) \| TO-247VAR

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中文翻译

获取价格

数据手册

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2SB1361Q 数据手册

Power Transistors

2SB1361

Silicon PNP triple diffusion planar type

For high power amplification

Complementary to 2SD2052

Unit: mm

15.0±0.3

11.0±0.2

5.0±0.2

Features

3.2

■

●

Satisfactory foward current transfer ratio h_FEvs. collector cur-

rent I_Ccharacteristics

Wide area of safe operation (ASO)

High transition frequency f_T

Full-pack package which can be installed to the heat sink with

φ3.2±0.1

2.0±0.2

●

2.0±0.1

0.6±0.2

one screw

1.1±0.1

Absolute Maximum Ratings (T =25˚C)

■

5.45±0.3

10.9±0.5

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–150

1:Base

2:Collector

3:Emitter

–5

–15

TOP–3 Full Pack Package(a)

I_C

–9

Collector power T_C=25°C

100

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

I_EBO

h_FE1

Conditions

min

typ

max

–50

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= –150V, I_E= 0

V_EB= –3V, I_C= 0

µA

V_CE= –5V, I_C= –20mA

V_CE= –5V, I_C= –1A

Forward current transfer ratio

h_FE2

h_FE3

V_BE

200

V_CE= –5V, I_C= –7A

Base to emitter voltage

V_CE= –5V, I_C= –7A

–1.8

–2.0

Collector to emitter saturation voltage V_CE(sat)

I_C= –7A, I_B= – 0.7A

Transition frequency

f_T

V_CE= –5V, I_C= – 0.5A, f = 1MHz

V_CB= –10V, I_E= 0, f = 1MHz

MHz

Collector output capacitance

C_ob

270

^*h_FE2Rank classification

Rank

h_FE2

60 to 120

80 to 160

100 to 200

12 3 4

中文翻译

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与2SB1361Q相关器件

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2SB1361S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 9A I(C) \| TO-247VAR
2SB1362	ISC	获取价格	Silicon PNP Power Transistors
2SB1362	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1362P	PANASONIC	获取价格	Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1362Q	PANASONIC	获取价格	Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1362S	PANASONIC	获取价格	Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1366	KEC	获取价格	2SC3229
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2SB1366	SWST	获取价格	功率三极管