Datasheet > 2SB1366F-O

2SB1366F-O

更新时间： 2024-11-03 01:20:43

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	157K
描述
PNP Silicon Power Transistors

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中文翻译

获取价格

数据手册

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2SB1366F-O 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

2SB1366F-O

2SB1366F-Y

Micro Commercial Components

Features

•

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

PNP Silicon

Power Transistors

Low V^CE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

•

€ € Halogen free available upon request by adding suffix "-HF"

Maximum Ratings

TO-220F

•

Mounting Torgue: 5 in-lbs Maximum

Symbol

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

-60

-7.0

-3.0

Unit

V_CEO

V_CBO

V_EBO

I_C

Collector power dissipation

P_C

T =25^OC

2.0

T_J

T_STG

Junction Temperature

Storage Temperature

-55 to +150

^OC

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

-60

---

-100

Vdc

µAdc

(I =-50mAdc, I_B=0)

I_CBO

Collector-Base Cutoff Current

(V_CB=-60Vdc,I =0)

Emitter-Base Cutoff Current

(V_EB=-7.0Vdc, I =0)

I_EBO

---

ON CHARACTERISTICS

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

Forward Current Transfer ratio

---

200

---

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

(I =-0.5Adc, V_CE=-5.0Vdc)

Forward Current Transfer ratio

DIMENSIONS

(I =-3.0Adc, V_CE=-5.0Vdc)

INCHES

MIN

.392

DIM

NOTE

MAX

.408

MIN

9.96

MAX

10.36

Collector-Emitter Saturation Voltage

---

-1.0

---

Vdc

MHz

(I =-2.0Adc, I =-0.2Adc)

.138

.106

3.50

2.70

Base-Emitter Saturation Voltage

---

.583

.142

.020

.598

.158

.030

14.80

3.60

0.50

15.20

(I =-0.5Adc, V_CE=-5.0Vdc)

.520

.100

13.20

4.00

f_T

Transition Frequency

9.0

150

2.54

(V_CE=-5.0Vdc, I =-0.5Adc)

0.75

C_ob

Collector Output Capacitance

---

.043

.169

.110

.053

.185

.126

1.10

4.30

2.80

1.35

4.70

3.20

(V_CB=-10Vdc, I =0, f=1.0MHz)

t _f

Fall time

---

0.4

1.7

---

µs

.098

.020

.114

.030

2.50

0.50

2.90

0.75

Storage time

(I =-2Adc, I B1=-IB2=-0.2Adc,VCC= -30Vdc)

C=-2Adc, I B1=-IB2=-0.2Adc,VCC= -30Vdc)

t _s

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

2. h_FERange: O: 60~120, Y:100~200

www.mccsemi.com

1 of 2

Revision: A

2013/03/08

中文翻译

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与2SB1366F-O相关器件

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2SB1366F-Y	MCC	获取价格	PNP Silicon Power Transistors
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2SB1368	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1368	ISC	获取价格	Silicon PNP Power Transistors
2SB1368F	SWST	获取价格	功率三极管
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2SB1369	ROHM	获取价格	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1369/DF	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti

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