Datasheet > 2SB1319Q

2SB1319Q

更新时间： 2024-10-13 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	50K
描述
TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| SC-71

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中文翻译

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数据手册

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2SB1319Q 数据手册

Transistor

2SB1319

Silicon PNP epitaxial planer type

For low-frequency power amplification

Unit: mm

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

Features

■

R0.9

●

Low collector to emitter saturation voltage V_CE(sat)

●

Large collector current I_C.

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

0.55±0.1

0.45±0.05

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–30

–20

2.5

–7

–8

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

I_C

–5

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= –10V, I_E= 0

min

typ

max

–100

–1

Unit

µA

Collector cutoff current

Emitter cutoff current

I_EBO

V_EB= –5V, I_C= 0

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

V_CEO

V_EBO

I_C= –1mA, I_B= 0

–20

–7

I_E= –10µA, I_C= 0

V_CE= –2V, I_C= –2A^*2

I_C= –3A, I_B= –0.1A^*2

h_FE

625

–1

Collector to emitter saturation voltage V_CE(sat)

MHz

Transition frequency

f_T

V_CB= –6V, I_E= 50mA, f = 200MHz

V_CB= –20V, I_E= 0, f = 1MHz

120

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

Rank

h_FE

90 ~ 135

120 ~ 205

180 ~ 625

12 3

中文翻译

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