生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code: | compliant | 风险等级: | 5.49 |
JESD-30 代码: | O-PBCY-W3 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1245-D | HITACHI |
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Small Signal Bipolar Transistor | |
2SB1245-D | RENESAS |
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SMALL SIGNAL TRANSISTOR | |
2SB1245RF | HITACHI |
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Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1245RR | HITACHI |
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Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1245TZ | HITACHI |
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暂无描述 | |
2SB1250 | ETC |
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||
2SB1250P | ETC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 3A I(C) | SOT-186 | |
2SB1250Q | ETC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 3A I(C) | SOT-186 | |
2SB1251 | ETC |
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||
2SB1251P | ETC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 4A I(C) | SOT-186 |