2SB1219GS

更新时间： 2024-11-18 13:02:43

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
2页	65K
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中文翻译

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数据手册

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2SB1219GS 数据手册

Transistors

2SB1219, 2SB1219A

Silicon PNP epitaxial planer type

Unit: mm

For general amplification

+0.10

+0.1

–0.0

0.15

0.3

–0.05

Complementary to 2SD1820 and 2SD1820A

I Features

• Large collector current I_C

(0.65)

• S-mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

(0.65)

1.3 0.1

2.0 0.2

10°

I Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−30

Unit

2SB1219

2SB1219A

2SB1219

2SB1219A

V_CBO

Collector to

base voltage

−60

V_CEO

−25

Collector to

1: Base

2: Emitter

3: Collector

EIAJ: SC-70

S-Mini Type Package

emitter voltage

−50

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

−5

Marking Symbol

• 2SB1219 : C

• 2SB1219A: D

−1

−500

150

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

−55 to +150

°C

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

µA

Collector cutoff current

V_CB= −20 V, I_E= 0

I_C= −10 µA, I_E= 0

− 0.1

2SB1219

2SB1219A

2SB1219

2SB1219A

V_CBO

−30

−60

−25

−50

−5

Collector to

base voltage

V_CEO

I_C= −2 mA, I_B= 0

Collector to

emitter voltage

Emitter to base voltage

V_EBO

I_E= −10 µA, I_C= 0

Forward current transfer ratio ^*

h_FE1

h_FE2

V_CE= −10 V, I_C= −150 mA

V_CE= −10 V, I_C= −500 mA

I_C= −300 mA, I_B= −30 mA

340

Collector to emitter saturation voltage ^*

Base to emitter saturation voltage ^*

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

− 0.35 − 0.6

−1.1

200

−1.5

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

Note) 1: Pulse measurement

2: Rank classification

Rank

120 to 240

170 to 340

No-rank

h_FE1

85 to 170

85 to 340

Product of no-rank is not classi-

fied and have no indication for

rank.

2SB1219

Marking

symbol

2SB1219A

中文翻译

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与2SB1219GS相关器件

型号	品牌	获取价格	描述	数据表
2SB1219H	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
2SB1219Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SC-70
2SB1219-Q	KEXIN	获取价格	PNP Transistors
2SB1219R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SC-70
2SB1219-R	KEXIN	获取价格	PNP Transistors
2SB1219S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SC-70
2SB1219-S	KEXIN	获取价格	PNP Transistors
2SB1219TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
2SB1220	PANASONIC	获取价格	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
2SB1220	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type