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2SB1220-S PDF预览

2SB1220-S

更新时间: 2024-11-22 01:08:43
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描述
PNP Transistors

2SB1220-S 数据手册

 浏览型号2SB1220-S的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Transistors  
2SB1220  
Features  
High collector to emitter voltage VCEO.  
Low noise voltage NV.  
Complementary to 2SD1821  
1 Base  
2 Emitter  
3 Collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
-150  
-150  
-5  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector Current - Continuous  
Collector Current - Pulse  
Collector Power Dissipation  
Junction Temperature  
I
C
-50  
mA  
mW  
I
CP  
-100  
150  
P
C
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-150  
-150  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 μAI  
Ic= -1 mA, I =0  
= -100μAI  
CB= -100V , I =0  
EB= -4V , I =0  
E=0  
B
I
E
C=0  
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
-1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-30 mA, I  
B
=-3mA  
=-3mA  
V
C
=-30 mA, I  
B
-1.2  
450  
hFE  
V
CE= -5V, I  
C= -10 mA  
130  
V
R
CE = –10V, I  
C
= –1mA, GV= 80dB,  
Noise voltage  
NV  
150  
mV  
g
= 100, Function = FLAT  
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= -10V, I  
CE= -10V, I  
E
= 0,f=1MHz  
= 10 mA,f=200MHz  
4
pF  
f
E
200  
MHz  
Classification of hfe  
Type  
Range  
Marking  
2SB1220-R  
130-220  
IR  
2SB1220-S  
2SB1220-T  
260-450  
IT  
185-330  
IS  
1
www.kexin.com.cn  

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