Datasheet > 2SB1221Q

2SB1221Q

更新时间： 2024-11-20 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	59K
描述
TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 70MA I(C) \| TO-92

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中文翻译

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数据手册

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2SB1221Q 数据手册

Transistor

2SB1221

Silicon PNP epitaxial planer type

For general amplification

Unit: mm

Complementary to 2SC3941

5.0±0.2

4.0±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Allowing supply with the radial taping.

0.7±0.1

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–250

–200

–5

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

0.45⁺^–0⁰^.^.¹¹⁵

1.27

0.45⁺^–0⁰^.^.¹¹⁵

1.27

–100

–70

I_C

2 3

1:Emitter

2:Collector

3:Base

2.54±0.15

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_j

150

˚C

TO–92NL Package

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= –12V, I_E= 0

–2

µA

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= –100µA, I_B= 0

–200

–5

I_E= –1µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= –10V, I_C= –5mA

I_C= –50mA, I_B= –5mA

V_CB= –10V, I_E= 10mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

220

Collector to emitter saturation voltage V_CE(sat)

–1.5

MHz

Transition frequency

f_T

Collector output capacitance

C_ob

^*h_FERank classification

Rank

h_FE

60 ~ 150

100 ~ 220

12 3 4

中文翻译

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