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2SB1224 PDF预览

2SB1224

更新时间： 2024-11-18 20:19:11
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
5页 57K
描述
7A, 60V, PNP, Si, POWER TRANSISTOR, TO-220ML, 3 PIN

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2SB1224 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220ML包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.38Is Samacsys：N
其他特性：BUILT IN BIAS RESISTOR RATIO IS 0.03外壳连接：ISOLATED
最大集电极电流 (IC)：7 A集电极-发射极最大电压：60 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：2000
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：NO端子面层：Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：20 MHzBase Number Matches：1

2SB1224 数据手册

 浏览型号2SB1224的Datasheet PDF文件第2页浏览型号2SB1224的Datasheet PDF文件第3页浏览型号2SB1224的Datasheet PDF文件第4页浏览型号2SB1224的Datasheet PDF文件第5页 
Ordering number : EN2210C  
SANYO Sem iconductors  
DATA S HEET  
PNP / NPN Epitaxial Planar Silicon Darlington Transistors  
2SB1224 / 2SD1826  
Driver Applications  
Applications  
•
Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators.  
Features  
• High DC current gain.  
• Large current capacity and wide ASO.  
• Micaless package facilitating mounting.  
Specifications ( ) : 2SB1224  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
(--)70  
(--)60  
(--)6  
(--)7  
(--)10  
2.0  
V
V
I
A
C
Collector Current (Pulse)  
I
A
CP  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
25  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=(--)40V, I =0A  
Unit  
min  
max  
I
V
CB  
V
EB  
V
CE  
(--)0.1  
(--)3.0  
mA  
mA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=(--)5V, I =0A  
C
EBO  
h
FE  
=(--)2V, I =(--)3.5A  
2000  
5000  
C
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52307IA TI IM TC-00000687 / N2503TN (KT)/92098HA(KT)/80796TS(KOTO) 8-9896/3127AT, TS No.2210-1/5  
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