Datasheet > 2SB1225_2014

2SB1225_2014

更新时间： 2024-11-19 01:20:03

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	154K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB1225_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1225

DESCRIPTION

·With TO-220F package

·Complement to type 2SD1827

·High DC current gain.

·Large current capacity and wide ASO.

·Low saturation voltage.

·DARLINGTON

APPLICATIONS

·Suitable for use in control of motor drivers,

printer hammer drivers, relay drivers, and

constant-voltage regulators.

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-70

UNIT

Open base

-60

Open collector

-6

-10

I_CM

Collector current-peak

-15

T_C=25℃

P_C

Collector dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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