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2SB1221 PDF预览

2SB1221

更新时间: 2024-11-17 22:39:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管放大器
页数 文件大小 规格书
3页 49K
描述
Silicon PNP epitaxial planer type

2SB1221 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.92最大集电极电流 (IC):0.07 A
集电极-发射极最大电压:200 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SB1221 数据手册

 浏览型号2SB1221的Datasheet PDF文件第2页浏览型号2SB1221的Datasheet PDF文件第3页 
Transistor  
2SB1221  
Silicon PNP epitaxial planer type  
For general amplification  
Unit: mm  
Complementary to 2SC3941  
5.0±0.2  
4.0±0.2  
Features  
Low collector to emitter saturation voltage VCE(sat)  
.
Allowing supply with the radial taping.  
0.7±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–250  
–200  
–5  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
0.45+00..115  
1.27  
0.45+00..115  
V
1.27  
V
–100  
–70  
mA  
mA  
W
IC  
1
2 3  
1:Emitter  
2:Collector  
3:Base  
2.54±0.15  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
Tj  
150  
˚C  
˚C  
TO–92NL Package  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = –12V, IE = 0  
–2  
µA  
V
Collector to emitter voltage  
Emitter to base voltage  
VCEO  
VEBO  
IC = –100µA, IB = 0  
–200  
–5  
IE = –1µA, IC = 0  
V
*
Forward current transfer ratio  
hFE  
VCE = –10V, IC = –5mA  
IC = –50mA, IB = –5mA  
VCB = –10V, IE = 10mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
60  
220  
Collector to emitter saturation voltage VCE(sat)  
–1.5  
V
MHz  
pF  
Transition frequency  
fT  
50  
80  
5
Collector output capacitance  
Cob  
10  
*hFE Rank classification  
Rank  
hFE  
Q
R
60 ~ 150  
100 ~ 220  
1

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