Datasheet > 2SB1220R

2SB1220R

更新时间： 2024-11-17 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	49K
描述
TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| SC-70

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中文翻译

获取价格

数据手册

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2SB1220R 数据手册

Transistor

2SB1220

Silicon PNP epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SD1821

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

●

High collector to emitter voltage V_CEO

●

Low noise voltage NV.

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–150

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–150

0.2±0.1

–5

–100

˚C

1:Base

2:Emitter

3:Collector

I_C

–50

EIAJ:SC–70

S-Mini Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

Marking symbol : I

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

V_CB= –100V, I_E= 0

–1

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= –100µA, I_B= 0

–150

–5

I_E= –10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= –5V, I_C= –10mA

130

450

–1

Collector to emitter saturation voltage V_CE(sat)

I_C= –30mA, I_B= –3mA

MHz

Transition frequency

f_T

V_CB= –10V, I_E= 10mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

V_CE= –10V, I_C= –1mA, G_V= 80dB,

R_g= 100kΩ, Function = FLAT

200

Collector output capacitance

C_ob

Noise voltage

150

^*h_FERank classification

Rank

h_FE

130 ~ 220

185 ~ 330

260 ~ 450

Marking Symbol

12 3

中文翻译

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