Datasheet > 2SB1220-T

2SB1220-T

更新时间： 2024-11-19 01:08:43

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2页	956K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1220-T 数据手册

SMD Type

Transistors

PNP Transistors

2SB1220

■ Features

● High collector to emitter voltage VCEO.

● Low noise voltage NV.

● Complementary to 2SD1821

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-150

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-50

℃

-100

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-150

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA, I =0

= -100μA， I

CB= -100V , I =0

^EB= -4V , I =0

E=0

C=0

CBO

EBO

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-30 mA, I

=-3mA

=-30 mA, I

-1.2

450

hFE

^CE= -5V, I

C= -10 mA

130

CE = –10V, I

= –1mA, GV= 80dB,

Noise voltage

150

= 100kΩ , Function = FLAT

Collector output capacitance

Transition frequency

CB= -10V, I

^CE= -10V, I

= 0,f=1MHz

= 10 mA,f=200MHz

200

MHz

■ Classification of hfe

Type

Range

Marking

2SB1220-R

130-220

2SB1220-S

2SB1220-T

260-450

185-330

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