生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 150 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 90 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1221 | PANASONIC |
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Silicon PNP epitaxial planer type | |
2SB1221P | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.07A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
2SB1221Q | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | TO-92 | |
2SB1221R | ETC |
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TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | TO-92 | |
2SB1223 | ISC |
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Silicon PNP Power Transistors | |
2SB1223 | SAVANTIC |
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Silicon PNP Power Transistors | |
2SB1223 | JMNIC |
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Silicon PNP Power Transistors | |
2SB1223 | SANYO |
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Driver Applications | |
2SB1223 | NJSEMI |
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Trans Darlington PNP 60V 4A 3-Pin(3+Tab) TO-220ML | |
2SB1223_15 | JMNIC |
获取价格 |
Silicon PNP Power Transistors |