Datasheet > 2SB1219-R

2SB1219-R

更新时间： 2024-11-19 01:09:39

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科信 - KEXIN		/
页数	文件大小	规格书
2页	760K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1219-R 数据手册

SMD Type

Transistors

PNP Transistors

2SB1219

■ Features

● Large collector current I

● Complementary to 2SD1820

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-30

Unit

VCBO

VCEO

VEBO

-25

-5

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-0.5

℃

-1

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-30

-25

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -2 mA, I =0

= -100μA， I

CB= -20V , I =0

EB= -4V , I =0

E=0

C=0

CBO

EBO

-0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-300 mA, I

=-30mA

-0.35 -0.6

=-300 mA, I

-1.1

-1.5

340

CE= -10V, I

CB= -10V, I

^CE= -10V, I

= -150 mA

= -500 mA

DC current gain

hFE

Collector output capacitance

Transition frequency

E= 0,f=1MHz

C= -50 mA,f=200MHz

200

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB1219-Q

85-170

2SB1219-R

120-240

2SB1219-S

170-340

2SB1219

85-340

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