Datasheet > 2SB1165

2SB1165

更新时间： 2024-11-09 20:28:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	144K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,5A I(C),TO-126

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2SB1165 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
最大集电极电流 (IC)：	5 A	配置：	Single
最小直流电流增益 (hFE)：	70	最高工作温度：	140 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	20 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	180 MHz	Base Number Matches：	1

2SB1165 数据手册

Ordering number:2046A

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1165/2SD1722

50V/5A Switching Applications

Applications

Package Dimensions

unit:mm

· Relay drivers, high-speed inverters, converters.

2043A

Features

[2SB1165/2SD1722]

· Low collector-to-emitter saturation voltage.

· High f .

· Excellent linearity of h

· Fast switching time.

B : Base

C : Collector

E : Emitter

( ) : 2SB1165

SANYO : TO-126LP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)60

(–)50

(–)6

(–)5

(–)8

1.2

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

Collector Dissipation

˚C

Tc=25˚C

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

(–)1

Collector Cutoff Current

=(–)40V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

(–)1

EBO

=(–)2V, I =(–)0.5A

=(–)2V, I =(–)4A

=(–)5V, I =(–)1A

70*

400*

Gain-Bandwidth Product

180

MHz

(130)

Output Capacitance

=(–)10V, f=1MHz

40(60)

* : The 2SB1165/2SD1722 are classified by 0.5A h as follows :

140

100

200

140

280

200

400

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/4137KI/D176TA, TS No.2046–1/4

12 3 4

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与2SB1165相关器件

型号	品牌	获取价格	描述	数据表
2SB1165_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1165_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1165Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 5A I(C) \| TO-126
2SB1165R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 5A I(C) \| TO-126
2SB1165S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 5A I(C) \| TO-126
2SB1165T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 5A I(C) \| TO-126
2SB1166	SANYO	获取价格	50V/8A Switching Applications
2SB1166Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 8A I(C) \| TO-126
2SB1166R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 8A I(C) \| TO-126
2SB1166S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 8A I(C) \| TO-126

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