2SB1169A

更新时间： 2024-01-14 06:11:11

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	75K
描述
For Power Amplification

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数据手册

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2SB1169A 数据手册

Power Transistors

2SB1169, 2SB1169A

Silicon PNP epitaxial planar type

For power amplification

Unit : mm

■ Features

7.0 0.3

3.5 0.2

0˚ to 0.15˚

3.0 0.2

2.0 0.2

• High forward current transfer ratio h_FEwhich has satisfactory linearity

• Low collector-emitter saturation voltage V_CE(sat)

• I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment.

■ Absolute Maximum Ratings T_C= 25°C

1.1 0.1

Parameter

Symbol

Rating

−60

Unit

0.75 0.1 0.4 0.1

0.9 0.1

0˚ to 0.15˚

2SB1169

2SB1169A

2SB1169

2SB1169A

V_CBO

Collector-base voltage

(Emitter open)

2.3 0.2

−80

4.6 0.4

V_CEO

−60

Collector-emitter voltage

(Base open)

−80

Emitter-base voltage (Collector open) V_EBO

−5

1: Base

2: Collector

3: Emitter

Collector current

I_C

I_CP

P_C

−1

Peak collector current

Collector power dissipation

−2

I-G1 Package

Note) Self-supported type package is also prepared.

T_a= 25°C

1.3

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 ∼ +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−60

−80

Typ

Max

Unit

2SB1169

2SB1169A

V_CEO

I_C= −30 mA, I_B= 0

Collector-emitter voltage

(Base open)

Base-emitter voltage

V_BE

I_CES

V_CE= −4 V, I_C= −1 A

V_CE= −60 V, V_BE= 0

V_CE= −80 V, V_BE= 0

V_CE= −30 V, I_B= 0

V_CE= −60 V, I_B= 0

V_EB= −5 V, I_C= 0

−1.3

−200

−300

−1

2SB1169

2SB1169A

2SB1169

2SB1169A

µA

Collector-emitter cutoff

current (E-B short)

I_CEO

µA

Collector-emitter cutoff

current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_EBO

h_FE1

V_CE= −4 V, I_C= − 0.2 A

V_CE= −4 V, I_C= −1 A

450



h_FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −1 A, I_B= − 0.125 A

−1

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= − 0.5 A, f = 10 MHz

0.5

1.2

0.3

I_C= −1 A, I_B1= −50 mA, I_B2= 50 mA

V_CC= −50 V

Strage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

40 to 90

70 to 150

120 to 250

200 to 450

Publication date: April 2003

SJD00045AED

12 3

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