SMD Type
Transistors
PNP Transistors
2SB1169A
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
■ Features
● High forward current transfer ratio hFE which
has satisfactory linearity
● Low collector-emitter saturation voltage VCE(sat)
0.127
max
+0.1
-0.1
0.80
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Ta = 25℃
Symbol
Rating
-80
-80
-5
Unit
V
VCBO
VCEO
VEBO
I
C
-1
A
I
CP
-2
15
P
C
W
℃
1.3
150
Junction Temperature
TJ
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Collector-emitter cut-off current
Emitter cut-off current
V
V
V
CBO
CEO
EBO
-80
-80
-5
Ic= -100 μA, I
Ic= -30 mA, I =0
= -100μA, I =0
CB= -80V , I =0
E=0
V
B
I
E
C
I
CBO
CES
V
V
V
V
E
-0.1
-200
-300
-0.1
-1
mA
uA
I
CE = −80 V, I
CE = −60 V, I
B
B
= 0
= 0
I
CEO
EBO
I
EB= -5V , I
C=0
mA
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-1 A, I
B
=-125mA
=-125mA
V
V
C=-1 A, I
B
-1.2
-1.3
450
V
BE
V
V
V
CE= -4V, I
CE= -4V, I
CE= -4V, I
C
C
C
= -1 A
= -200 mA
= -1 A
40
15
DC current gain
hFE
Turn-ON Time
Storage Time
Fall Time
t
on
0.5
1.2
0.3
40
I
V
C
= −1 A, IB1 = −50 mA, IB2 = 50 mA
us
t
stg
CC = −50 V
t
f
Transition frequency
f
T
V
CE= -10V, I
C= -500mA,f=10MHz
MHz
■ Classification of hfe(1)
Type
2SB1169A-R
40-90
2SB1169A-Q
70-150
2SB1169A-P 2SB1169A-O
120-250 200-450
Range
1
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