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2SB1169A-O

更新时间: 2024-11-10 01:05:27
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描述
PNP Transistors

2SB1169A-O 数据手册

 浏览型号2SB1169A-O的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Transistors  
2SB1169A  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Features  
High forward current transfer ratio hFE which  
has satisfactory linearity  
Low collector-emitter saturation voltage VCE(sat)  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Collector current -Pulse  
Collector Power Dissipation  
Ta = 25℃  
Symbol  
Rating  
-80  
-80  
-5  
Unit  
V
VCBO  
VCEO  
VEBO  
I
C
-1  
A
I
CP  
-2  
15  
P
C
W
1.3  
150  
Junction Temperature  
TJ  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Collector-emitter cut-off current  
Collector-emitter cut-off current  
Emitter cut-off current  
V
V
V
CBO  
CEO  
EBO  
-80  
-80  
-5  
Ic= -100 μAI  
Ic= -30 mA, I =0  
= -100μAI =0  
CB= -80V , I =0  
E=0  
V
B
I
E
C
I
CBO  
CES  
V
V
V
V
E
-0.1  
-200  
-300  
-0.1  
-1  
mA  
uA  
I
CE = 80 V, I  
CE = 60 V, I  
B
B
= 0  
= 0  
I
CEO  
EBO  
I
EB= -5V , I  
C=0  
mA  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-1 A, I  
B
=-125mA  
=-125mA  
V
V
C=-1 A, I  
B
-1.2  
-1.3  
450  
V
BE  
V
V
V
CE= -4V, I  
CE= -4V, I  
CE= -4V, I  
C
C
C
= -1 A  
= -200 mA  
= -1 A  
40  
15  
DC current gain  
hFE  
Turn-ON Time  
Storage Time  
Fall Time  
t
on  
0.5  
1.2  
0.3  
40  
I
V
C
= 1 A, IB1 = 50 mA, IB2 = 50 mA  
us  
t
stg  
CC = 50 V  
t
f
Transition frequency  
f
T
V
CE= -10V, I  
C= -500mA,f=10MHz  
MHz  
Classification of hfe(1)  
Type  
2SB1169A-R  
40-90  
2SB1169A-Q  
70-150  
2SB1169A-P 2SB1169A-O  
120-250 200-450  
Range  
1
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