Datasheet > 2SB1167

2SB1167

更新时间： 2024-11-09 20:28:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	144K
描述
TRANSISTOR,BJT,PNP,100V V(BR)CEO,3A I(C),TO-126

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2SB1167 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.56
Is Samacsys：	N	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	70
最高工作温度：	140 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	180 MHz
Base Number Matches：	1

2SB1167 数据手册

Ordering number:2047A

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1167/2SD1724

100V/3A Switching Applications

Features

Package Dimensions

unit:mm

· Relay drivers, high-speed inverters, converters.

2043A

Features

[2SB1167/2SD1724]

· Low collector-to-emitter saturation voltage.

· High f .

· Excellent linearity of h

· Fast switching time.

B : Base

C : Collector

E : Emitter

( ) : 2SB1167

SANYO :TO-126LP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)120

(–)100

(–)6

(–)3

(–)6

1.2

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

Collector Dissipation

˚C

Tc=25˚C

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

Parameter

Symbol

Conditions

Unit

min

typ

max

(–)1

Collector Cutoff Current

=(–)100V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

(–)1

EBO

=(–)5V, I =(–)0.5A

=(–)5V, I =(–)2A

=(–)10V, I =(–)0.5A

70*

400*

Gain-Bandwidth Product

(130)

180

MHz

Output Capacitance

=(–)10V, f=1MHz

25(40)

* : The 2SB1167/2SD1724 are classified by 0.5A h as follows :

140

100

200

140

280

200

400

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/4137KI/D176TA, TS No.2047–1/4

12 3 4

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与2SB1167相关器件

型号	品牌	获取价格	描述	数据表
2SB1167Q	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,100V V(BR)CEO,3A I(C),TO-126
2SB1167-Q	ONSEMI	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
2SB1167R	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,100V V(BR)CEO,3A I(C),TO-126
2SB1167S	ONSEMI	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126, TO-126LP, 3 PIN
2SB1167T	ONSEMI	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126, TO-126LP, 3 PIN
2SB1167-T	ONSEMI	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
2SB1168	SANYO	获取价格	100V/4A Switching Applications
2SB1168Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 4A I(C) \| TO-126
2SB1168R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 4A I(C) \| TO-126
2SB1168S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 4A I(C) \| TO-126

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