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2SB1167T

更新时间： 2024-09-16 14:49:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
4页 111K
描述
3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126, TO-126LP, 3 PIN

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中文翻译

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2SB1167T 技术参数

是否Rohs认证： 符合生命周期：End Of Life
零件包装代码：SIP包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
Factory Lead Time：1 week风险等级：5.19
最大集电极电流 (IC)：3 A集电极-发射极最大电压：100 V
配置：SINGLE最小直流电流增益 (hFE)：200
JEDEC-95代码：TO-126JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子面层：Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：130 MHz
Base Number Matches：1

2SB1167T 数据手册

 浏览型号2SB1167T的Datasheet PDF文件第2页浏览型号2SB1167T的Datasheet PDF文件第3页浏览型号2SB1167T的Datasheet PDF文件第4页 
Ordering number:ENN2047A  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SB1167/2SD1724  
100V/3A Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Relay drivers, high-speed inverters, converters.  
2043B  
Features  
[2SB1167/2SD1724]  
8.0  
2.0  
· Low collector-to-emitter saturation voltage.  
2.7  
4.0  
· High f .  
T
· Excellent linearity of h  
· Fast switching time.  
.
FE  
1.6  
0.8  
0.8  
0.6  
0.5  
1 : Emitter  
1
2
3
( ) : 2SB1167  
2 : Collector  
3 : Base  
SANYO : TO-126LP  
2.4  
4.8  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
(–)120  
(–)100  
(–)6  
(–)3  
(–)6  
1.2  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
V
EBO  
I
A
C
Collector Current (Pulse)  
I
A
CP  
W
W
˚C  
˚C  
Collector Dissipation  
P
C
Tc=25˚C  
20  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
typ  
max  
(–)1  
Collector Cutoff Current  
I
V
=(–)100V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
V
V
V
=(–)4V, I =0  
(–)1  
EBO  
C
h
1
=(–)5V, I =(–)0.5A  
70*  
40  
400*  
FE  
FE  
C
h
2
=(–)5V, I =(–)2A  
C
(130)  
180  
MHz  
MHz  
Gain-Bandwidth Product  
f
V
=(–)10V, I =(–)0.5A  
T
CE  
C
* : The 2SB1167/2SD1724 are classified by 0.5A h as follows :  
Continued on next page.  
FE  
Rank  
Q
R
S
T
h
70 to 140  
100 to 200 140 to 280 200 to 400  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
http://semicon.sanyo.com/en/network  
10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4  
1234

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与2SB1167T相关器件

型号 品牌 获取价格 描述 数据表
2SB1167-T ONSEMI

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
2SB1168 SANYO

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 		100V/4A Switching Applications
2SB1168Q ETC

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 		TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 4A I(C) | TO-126
2SB1168R ETC

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 		TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 4A I(C) | TO-126
2SB1168S ETC

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 		TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 4A I(C) | TO-126
2SB1168T ETC

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 		TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 4A I(C) | TO-126
2SB1169 PANASONIC

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 		For power amplification
2SB1169_15 KEXIN

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 		PNP Transistors
2SB1169A TYSEMI

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 		High forward current transfer ratio hFE which has satisfactory linearity.
2SB1169A PANASONIC

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 		For Power Amplification

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