Datasheet > 2SB1169_15

2SB1169_15

更新时间： 2024-11-07 01:05:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1221K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1169_15 数据手册

SMD Type

Transistors

PNP Transistors

2SB1169

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

■ Features

● High forward current transfer ratio hFE which

has satisfactory linearity

● Low collector-emitter saturation voltage V^CE(sat)

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current -Pulse

Collector Power Dissipation

Ta = 25℃

Symbol

Rating

-60

-5

Unit

VCBO

VCEO

VEBO

-1

-2

℃

1.3

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

CBO

CEO

EBO

-60

-5

Ic= -100 μA， I

Ic= -30 mA, I =0

= -100μA， I =0

CB= -60V , I =0

E=0

CBO

CES

-0.1

-200

-300

-0.1

-1

CE = −60 V, I

CE = −30 V, I

= 0

CEO

EBO

EB= -5V , I

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-1 A, I

=-125mA

C=-1 A, I

-1.2

-1.3

450

CE= -4V, I

= -1 A

= -200 mA

= -1 A

DC current gain

hFE

Turn-ON Time

Storage Time

Fall Time

0.5

1.2

0.3

= −1 A, IB1 = −50 mA, IB2 = 50 mA

stg

^CC= −50 V

Transition frequency

^CE= -10V, I

C= -500mA,f=10MHz

MHz

■ Classification of hfe(1)

Type

2SB1169-R

40-90

2SB1169-Q

70-150

2SB1169-P

120-250

2SB1169-O

200-450

Range

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2SB1169AP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SB1169A-P	KEXIN	获取价格	PNP Transistors
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