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2SB1167-Q PDF预览

2SB1167-Q

更新时间: 2024-02-18 04:56:01
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
4页 111K
描述
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126LP, 3 PIN

2SB1167-Q 技术参数

生命周期:Transferred零件包装代码:SIP
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.21
最大集电极电流 (IC):3 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):70
JEDEC-95代码:TO-126JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

2SB1167-Q 数据手册

 浏览型号2SB1167-Q的Datasheet PDF文件第2页浏览型号2SB1167-Q的Datasheet PDF文件第3页浏览型号2SB1167-Q的Datasheet PDF文件第4页 
Ordering number:ENN2047A  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SB1167/2SD1724  
100V/3A Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Relay drivers, high-speed inverters, converters.  
2043B  
Features  
[2SB1167/2SD1724]  
8.0  
2.0  
· Low collector-to-emitter saturation voltage.  
2.7  
4.0  
· High f .  
T
· Excellent linearity of h  
· Fast switching time.  
.
FE  
1.6  
0.8  
0.8  
0.6  
0.5  
1 : Emitter  
1
2
3
( ) : 2SB1167  
2 : Collector  
3 : Base  
SANYO : TO-126LP  
2.4  
4.8  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
()120  
()100  
()6  
()3  
()6  
1.2  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
V
EBO  
I
A
C
Collector Current (Pulse)  
I
A
CP  
W
W
˚C  
˚C  
Collector Dissipation  
P
C
Tc=25˚C  
20  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
typ  
max  
()1  
Collector Cutoff Current  
I
V
=()100V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
V
V
V
=()4V, I =0  
()1  
EBO  
C
h
1
=()5V, I =()0.5A  
70*  
40  
400*  
FE  
FE  
C
h
2
=()5V, I =()2A  
C
(130)  
180  
MHz  
MHz  
Gain-Bandwidth Product  
f
V
=()10V, I =()0.5A  
T
CE  
C
* : The 2SB1167/2SD1724 are classified by 0.5A h as follows :  
Continued on next page.  
FE  
Rank  
Q
R
S
T
h
70 to 140  
100 to 200 140 to 280 200 to 400  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
http://semicon.sanyo.com/en/network  
10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4  

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