Datasheet > 2SB1167R

2SB1167R

更新时间： 2024-11-09 14:46:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	46K
描述
TRANSISTOR,BJT,PNP,100V V(BR)CEO,3A I(C),TO-126

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2SB1167R 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.58	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	140 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	180 MHz
Base Number Matches：	1

2SB1167R 数据手册

Ordering number:ENN2047A

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1167/2SD1724

100V/3A Switching Applications

Features

Package Dimensions

unit:mm

· Relay drivers, high-speed inverters, converters.

2043B

Features

[2SB1167/2SD1724]

8.0

2.0

· Low collector-to-emitter saturation voltage.

2.7

4.0

· High f .

· Excellent linearity of h

· Fast switching time.

1.6

0.8

0.6

0.5

1 : Emitter

( ) : 2SB1167

2 : Collector

3 : Base

SANYO : TO-126LP

2.4

4.8

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)120

(–)100

(–)6

(–)3

(–)6

1.2

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

˚C

Collector Dissipation

Tc=25˚C

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

Parameter

Symbol

Conditions

Unit

min

typ

max

(–)1

Collector Cutoff Current

=(–)100V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

(–)1

EBO

=(–)5V, I =(–)0.5A

70*

400*

=(–)5V, I =(–)2A

(130)

180

MHz

Gain-Bandwidth Product

=(–)10V, I =(–)0.5A

* : The 2SB1167/2SD1724 are classified by 0.5A h as follows :

Continued on next page.

Rank

70 to 140

100 to 200 140 to 280 200 to 400

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4

12 3 4

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与2SB1167R相关器件

型号	品牌	获取价格	描述	数据表
2SB1167S	ONSEMI	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126, TO-126LP, 3 PIN
2SB1167T	ONSEMI	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126, TO-126LP, 3 PIN
2SB1167-T	ONSEMI	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
2SB1168	SANYO	获取价格	100V/4A Switching Applications
2SB1168Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 4A I(C) \| TO-126
2SB1168R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 4A I(C) \| TO-126
2SB1168S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 4A I(C) \| TO-126
2SB1168T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 4A I(C) \| TO-126
2SB1169	PANASONIC	获取价格	For power amplification
2SB1169_15	KEXIN	获取价格	PNP Transistors

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