Datasheet > 2SB1005_15

2SB1005_15

更新时间： 2024-11-11 01:16:47

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	153K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1005_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1005

DESCRIPTION

·With TO-220C package

·High DC Current Gain

·DARLINGTON

APPLICATIONS

·For audio frequency power amplifier

applications

PINNING

DESCRIPTION

Base

Collector; connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-50

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector power dissipation

Junction temperature

Storage temperature

Open base

-50

Open collector

-5

-4

P_C

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

下载PDF

与2SB1005_15相关器件

型号	品牌	获取价格	描述	数据表
2SB1005_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1007	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1007	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1007	ISC	获取价格	isc Silicon PNP Power Transistor
2SB1007	ROHM	获取价格	Epitaxial Planar PNP Silicon Transistor
2SB1007/P	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/PQ	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/PR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/Q	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/QR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti