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2SB0774 PDF预览

2SB0774

更新时间: 2024-02-04 17:12:37
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松下 - PANASONIC /
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2页 38K
描述
Silicon PNP epitaxial planer type(For low-frequency amplification)

2SB0774 数据手册

 浏览型号2SB0774的Datasheet PDF文件第2页 
Transistor  
2SB774  
Silicon PNP epitaxial planer type  
For low-frequency amplification  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
High emitter to base voltage VEBO  
.
Protective diodes and resistances between emitter and base can  
be omitted.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–30  
Unit  
V
0.45+00..12  
0.45+00..12  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–25  
V
1.27  
1.27  
–15  
V
–200  
mA  
mA  
mW  
˚C  
1 2 3  
1:Emitter  
IC  
–100  
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
2.54±0.15  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
µA  
µA  
V
VCB = –10V, IE = 0  
–1  
Collector cutoff current  
ICEO  
VCE = –20V, IB = 0  
–100  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = –10µA, IE = 0  
–30  
–25  
–15  
210  
90  
IC = –2mA, IB = 0  
V
IE = –10µA, IC = 0  
V
*
hFE1  
VCE = –10V, IC = –2mA  
VCE = –2V, IC = –100mA  
IC = –100mA, IB = –10mA  
VCB = –10V, IE = 2mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
460  
Forward current transfer ratio  
hFE2  
Collector to emitter saturation voltage VCE(sat)  
–0.5  
V
MHz  
pF  
Transition frequency  
fT  
150  
4
Collector output capacitance  
Cob  
*hFE1 Rank classification  
Rank  
hFE1  
R
S
210 ~ 340  
290 ~ 460  
1

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