Datasheet > 2SB0790(2SB790)

2SB0790(2SB790)

更新时间： 2022-01-19 02:09:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	65K
描述
2SB0790 (2SB790) - PNP Transistor

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2SB0790(2SB790) 数据手册

Transistor

2SB0790 (2SB790)

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to 2SD0969 (2SD969)

Unit: mm

6.9 0.1

2.5 0.1

1.0

1.5

1.5 R0.9

Features

R0.9

Low collector to emitter saturation voltage V_CE(sat)

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

0.55 0.1

0.45 0.05

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–25

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–20

–7

2.5

–1

I_C

– 0.5

600

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

µA

V_CB= –25V, I_E= 0

Collector cutoff current

I_CEO

V_CE= –20V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

–25

–20

–7

I_C= –1mA, I_B= 0

I_C= –10µA, I_C= 0

V_CE= –2V, I_C= –0.5A^*2

V_CE= –2V, I_C= –1A^*2

I_C= –500mA, I_B= –50mA^*2

220

h_FE1

h_FE2

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.4

–1.2

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

150

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

90 ~ 155

130 ~ 220

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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