Datasheet > 2SB0792A|2SB792A

2SB0792A|2SB792A

更新时间： 2022-01-18 16:09:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管信号器
页数	文件大小	规格书
3页	80K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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2SB0792A|2SB792A 数据手册

Transistors

2SB0792 (2SB792), 2SB0792A (2SB792A)

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification

Unit: mm

+0.10

–0.05

■ Features

0.40

+0.10

–0.06

0.16

• High collector-emitter voltage (Base open) V_CEO

• Low noise voltage NV

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

(0.95) (0.95)

1.9 0.1

+0.20

■ Absolute Maximum Ratings T_a= 25°C

2.90

–0.05

Parameter

Symbol

Rating

−150

−185

−150

−185

−5

Unit

10˚

2SB0792

2SB0792A

2SB0792

2SB0792A

V_CBO

Collector-base voltage

(Emitter open)

1: Base

2: Emitter

3: Collector

V_CEO

Collector-emitter voltage

(Base open)

EIAJ: SC-59

Mini3-G1 Package

Emitter-base voltage (Collector open) V_EBO

Collector current

I_C

I_CP

P_C

T_j

−50

°C

Marking Symbol:

• 2SB0792: I

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

−100

200

• 2SB0792A: 2F

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

Conditions

Min

−150

−185

−5

Typ

Max

Unit

2SB0792

2SB0792A

V_CEO

I_C= −100 µA, I_B= 0

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

V_EBO

I_CBO

h_FE

I_E= −10 µA, I_C= 0

µA



V_CB= −100 V, I_E= 0

V_CE= −5 V, I_C= −10 mA

−1

450

330

−1

2SB0792

2SB0792A

130

Forward current transfer

ratio ^*

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −30 mA, I_B= −3 mA

MHz

f_T

V_CB= −10 V, I_E= 10 mA, f = 200 MHz

200

Collector output capacitance

C_ob

V_CB= −10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Noise voltage

V_CE= −10 V, I_C= −1 mA, G_V= 80 dB

R_g= 100 kΩ, Function = FLAT

150

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

130 to 220

185 to 330

260 to 450

h_FE

2SB0792

2SB0792A

Marking

symbol

2FR

2FS



Note) The part numbers in the parenthesis show conventional part number.

Publication date: March 2003

SJC00058BED

12 3

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2SB0792AR	ETC	TRANSISTOR \| BJT \| PNP \| 185V V(BR)CEO \| 50MA I(C) \| TO-236AB	获取价格
2SB0792AS	ETC	TRANSISTOR \| BJT \| PNP \| 185V V(BR)CEO \| 50MA I(C) \| TO-236AB	获取价格
2SB0792AT	ETC	TRANSISTOR \| BJT \| PNP \| 185V V(BR)CEO \| 50MA I(C) \| TO-236AB	获取价格
2SB0792R	ETC	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| TO-236AB	获取价格
2SB0792S	ETC	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| TO-236AB	获取价格
2SB0792T	ETC	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| TO-236AB	获取价格