Datasheet > 2SB082020MAJL

2SB082020MAJL

更新时间： 2022-12-22 21:06:01

品牌	Logo	应用领域
士兰微 - SILAN		肖特基二极管
页数	文件大小	规格书
1页	25K
描述
SCHOTTKY BARRIER DIODE CHIPS

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2SB082020MAJL 数据手册

2SB082020MAJL

2SB082020MAJL SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

2SB082020MAJL is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

High ESD capability;

High surge capability;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits.;

Chip Topography and Dimensions

La: Chip Size: 830mm;

Chip Size:8m3m0 X 830mm;

Lb: Pad Size: 750mm;

Chip Thickness: 210±20mm;

ORDERING SPECIFICATIONS

Product Name

Specification

For Au and AlSi wire bonding

package

2SB082020MAJL

ABSOLUTE MAXIMUM RATINGS

Parameters

Symbol

Ratings

Unit

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

RRM

FAV

FSM

150

°C

STG

•40~150

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameters

Reverse Voltage

Symbol

Test Conditions

IR=50ȝA

I =1A

Min.

Max.

Unit

••

0.530

0.595

Forward Voltage

Reverse Current

I =2A

ȝA

V =20V

V =10V

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.0

2008.05.19

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