Datasheet > 2SB0873|2SB873

2SB0873|2SB873

更新时间： 2024-02-12 23:00:12

品牌	Logo	应用领域
其他 - ETC		晶体晶体管信号器
页数	文件大小	规格书
3页	80K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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2SB0873|2SB873 数据手册

Transistors

2SB0873 (2SB873)

Silicon PNP epitaxial planar type

For low-frequency power amplification

For DC-DC converter

Unit: mm

5.9 0.2

4.9 0.2

For stroboscope

■ Features

0.7 0.1

• Low collector-emitter saturation voltage V_CE(sat)

• Large collector current I_C

■ Absolute Maximum Ratings T_a= 25°C

+0.2

0.45

+0.2

Parameter

Symbol

Rating

Unit

–0.1

0.45

–0.1

(1.27)

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−30

1: Emitter

2: Collector

3: Base

−20

−7

EIAJ: SC-51

TO-92L-A1 Package

2.54 0.15

Collector current

I_C

I_CP

P_C

T_j

−5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

−10

°C

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

V_EBO

I_CBO

Conditions

Min

−20

−7

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −10 V, I_E= 0

V_EB= −5 V, I_C= 0

V_CE= −2 V, I_C= −2 A

−100

625



I_EBO

1, 2

Forward current transfer ratio ^*

h_FE

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= −3 A, I_B= − 0.1 A

−1

Transition frequency

f_T

V_CB= −6 V, I_E= 50 mA, f = 200 MHz

V_CB= −20 V, I_E= 0, f = 1 MHz

120

MHz

Collector output capacitance

C_ob

(Common-emitter reverse transfer)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Rank

h_FE

90 to 135

120 to 205

180 to 625

Note) The part number in the parenthesis shows conventional part number.

Publication date: January 2003

SJC00061BED

12 3

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