Datasheet > 2SB0928PQ

2SB0928PQ

更新时间： 2024-01-02 11:15:11

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松下 - PANASONIC		/
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描述
Transistor

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技术参数
数据手册

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2SB0928PQ 技术参数

生命周期：	Lifetime Buy	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	60
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	30 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SB0928PQ 数据手册

Power Transistors

2SB0928, 2SB0928A (2SB928, 2SB928A)

Silicon PNP epitaxial planar type

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

For power amplification

1.0±0.1

For TV vartical deflection output

Complementary to 2SD1250 and 2SD1250A

1.5max.

1.1max.

0.5max.

Features

High collector to emitter V_CEO

■

●

0.8±0.1

●

High collector power dissipation P_C

2.54±0.3

●

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

5.08±0.5

1:Base

2:Collector

3:Emitter

N Type Package

Absolute Maximum Ratings (T =25˚C)

■

Unit: mm

3.4±0.3

Parameter

Symbol

Ratings

–200

–150

–180

–6

Unit

8.5±0.2

6.0±0.3

1.0±0.1

Collector to base voltage

V_CBO

Collector to

2SB0928

V_CEO

emitter voltage 2SB0928A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

–3

R0.5

0.8±0.1

I_C

–2

0 to 0.4

2.54±0.3

1.1 max.

5.08±0.5

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

1.3

1:Base

2:Collector

3:Emitter

N Type Package (DS)

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–50

Unit

µA

Collector cutoff current

Emitter cutoff current

Collector to base voltage

V_CB= –200V, I_E= 0

I_EBO

V_EB= –4V, I_C= 0

V_CBO

I_C= –500µA, I_E= 0

–200

–150

–180

–6

2SB0928

2SB0928A

Collector to emitter

voltage

V_CEO

V_EBO

I_C= –5mA, I_B= 0

Emitter to base voltage

I_E= –500µA, I_C= 0

h_FE1

V_CE= –10V, I_C= –150mA

V_CE= –10V, I_C= –400mA

I_C= –500mA, I_B= –50mA

V_CE= –10V, I_C= – 0.5A, f = 10MHz

240

Forward current transfer ratio

Base to emitter voltage

h_FE2

V_BE

–1

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

f_T

MHz

^*h_FE1Rank classification

Rank

h_FE1

Note) The part numbers in the parenthesis show conventional part number.

60 to 140

100 to 240

Note: Ordering can be made by the common rank (PQ rank h_FE1= 60 to 240) in the rank classification.

12 3

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