Transistor
2SB0819 (2SB819)
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1051
Unit: mm
6.9 0.1
2.5 0.1
1.0
1.5
1.5 R0.9
R0.9
Features
High collector to emitter voltage VCEO
Large collector power dissipation PC.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
G
.
G
R0.7
G
0.85
0.55 0.1
0.45 0.05
Absolute Maximum Ratings (Ta=25˚C)
I
3
2
1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–50
2.5
2.5
–40
V
–5
V
–3
–1.5
A
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
IC
A
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
VCB = –20V, IE = 0
CE = –10V, IB = 0
min
typ
max
–1
Unit
µA
µA
µA
V
Collector cutoff current
ICEO
V
–100
–10
Emitter cutoff current
IEBO
VEB = –5V, IC = 0
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
VCBO
VCEO
IC = –1mA, IE = 0
–50
–40
80
IC = –2mA, IB = 0
V
*1
hFE
VCE = –5V, IC = –1A*2
IC = –1.5A, IB = –0.15A*2
IC = –2A, IB = –0.2A*2
220
–1
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
V
V
–1.5
Transition frequency
fT
VCB = –5V, IE = 0.5A, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
150
45
MHz
pF
Collector output capacitance
Cob
*2 Pulse measurement
*1
h
Rank classification
FE
Rank
hFE
Q
R
80 ~ 160
120 ~ 220
Note.) The Part number in the Parenthesis shows conventional part number.
1