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2SB083040ML PDF预览

2SB083040ML

更新时间: 2024-02-04 11:36:11
品牌 Logo 应用领域
士兰微 - SILAN 肖特基二极管
页数 文件大小 规格书
1页 17K
描述
SCHOTTKY BARRIER DIODE CHIPS

2SB083040ML 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:125 °C
最大输出电流:1 A最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKYBase Number Matches:1

2SB083040ML 数据手册

  
2SB083040ML  
2SB083040ML SCHOTTKY BARRIER DIODE CHIPS  
DESCRIPTION  
Ø
2SB083040ML is a schottky barrier diode chips  
fabricated in silicon epitaxial planar technology;  
Low power losses, high efficiency;  
Guard ring construction for transient protection;  
High ESD capability;  
Ø
Ø
Ø
Ø
Ø
High surge capability;  
Chip Topography and Dimensions  
Packaged products are widely used in switching  
power suppliers, polarity protection circuits and  
other electronic circuits.;  
La: Chip Size: 830mm;  
Lb: Pad Size: 670mm;  
Ø
Chip Size:8m3m0 X 830mm;  
ORDERING SPECIFICATIONS  
Ø
Chip Thickness: 280±20mm;  
Product Name  
Specification  
For axial leads package  
2SB083040MLYY  
ABSOLUTE MAXIMUM RATINGS  
Parameters  
Symbol  
Ratings  
Unit  
Maximum Repetitive Peak Reverse Voltage  
Average Forward Rectified Current  
Peak Forward Surge Current@8.3ms  
Maximum Operation Junction Temperature  
Storage Temperature Range  
V
40  
1
V
A
RRM  
I
FAV  
I
30  
125  
A
FSM  
T
J
°C  
°C  
T
•40~125  
STG  
ELECTRICAL CHARACTERISTICS (Tamb=25°C)  
Parameters  
Reverse Voltage  
Symbol  
Test Conditions  
I =1mA  
Min.  
Max.  
Unit  
V
BR  
40  
••  
V
R
Forward Voltage  
Reverse Current  
V
I =1A  
••  
••  
0.55  
1
V
F
F
I
V =40V  
R
mA  
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
REV:1.0  
2007.04.27  
Http: www.silan.com.cn  
Page 1 of 1  

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